1–8 GHz high efficiency single-stage travelling wave power amplifier
1–8 GHz high efficiency single-stage travelling wave power amplifier
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DOI：
10.1007/s10470-012-9863-2
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发表时间：
2011-12
影响因子：
1.4
通讯作者：
M. Sayginer;M. Yazgi;H. Kuntman;B. Virdee
中科院分区：
文献类型：
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作者：
M. Sayginer;M. Yazgi;H. Kuntman;B. Virdee
本文介绍了一种单级晶体管行波结构的a /AB类宽带功率放大器，该放大器在有源器件的输入端采用电容耦合和频率相关损耗人工线。该方法显著提高了放大器的增益-带宽积、输入匹配和增益平坦度性能。为了确保放大器在其整个工作频带2至8 GHz范围内向负载提供预定义的功率，在放大器的输出端应用了宽带负载拉动技术。为了避免片外扼流圈电感带来的寄生电容效应导致放大器带宽降低，设计了一种宽带射频扼流圈。采用0.25 μm GaAs pHEMT MMIC工艺制备了1.31 × 2.93 mm2功率放大器。测量结果表明，该放大器的平均输出功率为29.5 dBm，输出功率为1 dBof，输出功率为26 dBm，对应的PAE水平分别为1 dB和1 dB时的55%和35%。
This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier’s gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier’s bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm2power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an averagePsatof 29.5 dBm andPout,1 dBof 26 dBm, and the corresponding PAE levels are 55 and 35 % for thePsatandPout,1 dB, respectively.