Inverse bilayer magnetoelectric thin film sensor
Inverse bilayer magnetoelectric thin film sensor
复制标题
DOI：
10.1063/1.4958728
复制
发表时间：
2016-07-11
影响因子：
4
通讯作者：
Quandt, E.
中科院分区：
文献类型：
--
作者：
Yarar, E.;Salzer, S.;Quandt, E.
使用非晶FeCoSiB作为磁致伸缩层和AlN作为压电层的磁电（ME）薄膜传感器的先前研究揭示了在机械共振中在几个pT/Hz（1/2）的范围内的检测极限（LOD）。这些传感器由Si/SiO2/Pt/AlN/FeCoSiB层堆叠组成，如层沉积所需的温度所指示的。非常高质量的AlN的低温沉积路线允许反转的沉积顺序，从而允许将非晶FeCoSiB沉积在非常光滑的Si衬底上。因此，LOD可以增强几乎一个数量级，在传感器的机械谐振处达到400 fT/Hz（1/2）。巨ME系数（α（ME））高达5 kV/cm Oe的测量。透射电子显微镜的调查显示，从Pt-AlN界面与本地外延的AlN的高度c轴取向的生长。由AIP出版社出版。
Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz(1/2) in the mechanical resonance. These sensors are comprised of a Si/SiO2/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz(1/2) at the mechanical resonance of the sensor. Giant ME coefficients (alpha(ME)) as high as 5kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy. Published by AIP Publishing.