Low power CMOS preamplifier for neural recording applications
Low power CMOS preamplifier for neural recording applications
复制标题
DOI：
10.1088/1674-4926/31/4/045002
复制
发表时间：
2010-04
影响因子：
5.1
通讯作者：
Zhang Xu;Pei Weihua;Huang Beiju;Chen Hongda
中科院分区：
文献类型：
--
作者：
Zhang Xu;Pei Weihua;Huang Beiju;Chen Hongda
提出了一种用于细胞外神经记录的全差分带通互补金属氧化物半导体前置放大器。采用电容耦合、电容反馈的拓扑结构。前置放大器的中带增益为20.4分贝，直流增益为0。前置放大器的−3分贝上限截止频率为6.7 kHz。较低的截止频率可以调整，以放大位于不同频带的场或动作电位。它的输入参考噪声为8.2krms，在0.15 Hz至6.7kHz范围内积分，用于记录局部场电位和混合神经尖峰，在3.3V电源下的功耗为23.1Krms W。还设计了带隙基准电路来提供偏置电压和电流。0.22mm2原型芯片采用0.35-μm N势垒CMOS2P4M工艺制作，包括前置放大器及其偏置电路。
A fully-differential bandpass CMOS (complementary metal oxide semiconductor) preamplifier for extracellular neural recording is presented. The capacitive-coupled and capacitive-feedback topology is adopted. The preamplifier has a midband gain of 20.4 dB and a DC gain of 0. The −3 dB upper cut-off frequency of the preamplifier is 6.7 kHz. The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands. It has an input-referred noise of 8.2 μVrms integrated from 0.15 Hz to 6.7 kHz for recording the local field potentials and the mixed neural spikes with a power dissipation of 23.1 μW from a 3.3 V supply. A bandgap reference circuitry is also designed for providing the biasing voltage and current. The 0.22 mm2 prototype chip, including the preamplifier and its biasing circuitry, is fabricated in the 0.35-μm N-well CMOS 2P4M process.