Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO2 microsphere arrays
Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO2 microsphere arrays
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DOI：
10.1117/12.875980
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
Xiaohang Li;Y. Ee;Renbo Song;N. Tansu
中科院分区：
文献类型：
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作者：
Xiaohang Li;Y. Ee;Renbo Song;N. Tansu
采用折射率匹配的二氧化钛微球阵列提高了InGaN量子阱发光二极管的光提取效率。对浸渍法和快速对流沉积法（RCD）在LED上沉积TiO2微球阵列进行了优化研究。分别采用优化的浸渍法和RCD法制备了二维相对密排和密排TiO2微球阵列。利用直径为520 nm的TiO2微球，电注入下的LED的光提取效率提高了1.83倍。这种增强主要归因于由于TiO2微结构阵列的匹配折射率和球形形状而导致的有效光子逃逸锥的增加。
The enhancement of light extraction efficiency of InGaN quantum well (QW) light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO2 microsphere arrays onto LEDs. The 2-dimensional relatively close-packed and close-packed TiO2 microsphere arrays were deposited by the using optimized conditions of the dipping method and RCD method, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.83 times by utilizing 520-nm diameter TiO2 microspheres. This enhancement is primarily attributed to increase in the effective photon escape cone due to the matched index and spherical shape of TiO2 microstructures arrays.