Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs∕GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy
Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs∕GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy
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DOI：
10.1063/1.2372710
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发表时间：
2006-11
影响因子：
4
通讯作者：
Lin Yang;J. Motohisa;J. Takeda;K. Tomioka;T. Fukui
中科院分区：
文献类型：
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作者：
Lin Yang;J. Motohisa;J. Takeda;K. Tomioka;T. Fukui
报道了用选区金属有机气相外延技术制备InGaAs/GaAs单量子阱纳米管的方法。纳米柱的直径标准偏差约为8%，高度标准偏差约为5%。随着纳米管直径的增大，其光致发光峰位向长波方向移动，这不是由于径向或轴向的量子限制效应，而是由于不同直径的纳米管中铟含量的化学计量比不同所致。
The authors report the fabrication of the nanopillars with single InGaAs∕GaAs quantum well by selective-area metal organic vapor phase epitaxy. The standard diameter deviation of the nanopillars is about 8% and the standard deviation in their height about 5%. Their photoluminescence peak positions shift to the longer wavelength with an increase in the diameter of the nanopillars, which is not due to the quantum confinement effect in the radial or axial direction but due to the stoichiometry difference of the indium content in the nanopillars with different diameters.