High-speed tunnel-injection quantum well and quantum dot lasers
High-speed tunnel-injection quantum well and quantum dot lasers
复制标题
高速隧道注入量子阱和量子点激光器
DOI：
--
复制
发表时间：
1998
期刊：
影响因子：
--
通讯作者：
R. Bhat
中科院分区：
文献类型：
--
作者：
P. Bhattacharya;Xiangkun Zhang;Yahsing Yuan;K. Kamath;D. Klotzkin;C. Caneau;R. Bhat
为了规避半导体量子阱激光器中热载流子现象的众多性能限制效应，我们已经展示了通过隧穿将载流子直接注入到激光子带中的创新方法。这些激光器，与各种材料系统，已显示出减少热载流子效应的证据。具体而言，测量的小信号调制带宽约为50 GHz和110 GHz的最大固有带宽已实现与0.98微米的激光器。这是所有激光器中测得的最高调制带宽。在1.55微米激光器中，俄歇复合几乎被消除，啁啾和温度依赖性也被降低。最近在小面积垂直腔面发射激光器中也证明了热载流子和载流子泄漏效应的显着减少。这些实验结果支持最近的模拟，确定在高速激光器中的增益抑制所造成的电子温度和准费米能级之间的耦合。以量子点为增益介质的激光器具有高微分增益、低阈值电流、温度不敏感和高调制带宽等优点。本文研究了室温单模脊波导量子盒激光器，其中量子盒增益区是通过自组织生长实现的，载流子注入是通过传统的异质结势垒和隧穿方法实现的。隧穿注入量子点激光器在微分增益（6 × 10-14 cm 2）和调制带宽方面都有改进。这些结果将被提交和讨论。
To circumvent the numerous performance-limiting effects of hot-carrier phenomena in semiconductor quantum-well lasers, we have demonstrated the innovative approach of directly injecting carriers into the lasing subband by tunneling. These lasers, made with a variety of material systems, have shown evidence of reduced hot-carrier effects. Specifically, measured small-signal modulation bandwidth of approximately 50 GHz and maximum intrinsic bandwidth of 110 GHz have been achieved with 0.98 micrometers lasers. These are the highest measured modulation bandwidths in any laser. Auger recombination has been virtually eliminated in 1.55 micrometers lasers and reduced chirp and temperature dependence are also demonstrated. Significant reduction of hot-carrier and carrier leakage effects have also been recently demonstrated in small-area vertical-cavity surface-emitting lasers. These experimental results are supported by recent simulations that identify gain suppression in high speed lasers to be caused by a coupling between the electron temperature and the quasi Fermi level. Lasers with quantum dots as gain media promise high differential gain, very low threshold current, temperature-insensitive operation and high modulation bandwidth. We have investigated room-temperature single-mode ridge-waveguide quantum box lasers in which the quantum box gain regions are realized by self-organized growth and carrier injection is achieved by conventional means over hetero-barriers and by tunneling. The tunneling injection quantum dot lasers show improvements in both differential gain (6 X 10-14 cm2) and modulation bandwidth. These results will be presented and discussed.