HIGH-PERFORMANCE HEAT SINKING FOR VLSI
HIGH-PERFORMANCE HEAT SINKING FOR VLSI
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DOI：
10.1109/edl.1981.25367
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发表时间：
1981-01-01
期刊：
影响因子：
--
通讯作者：
PEASE, RFW
中科院分区：
文献类型：
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作者：
TUCKERMAN, DB;PEASE, RFW
已经研究了实现平面集成电路的紧凑、高性能强制液体冷却的问题。基材和冷却剂之间的对流传热系数 h 被发现是实现低热阻的主要障碍。对于受限通道中的层流，h 与通道宽度成反比，因此需要微观通道。冷却液粘度决定了最小实际通道宽度。使用高深宽比通道来增加表面积将在一定程度上进一步降低热阻。基于这些考虑，设计并测试了一种用于硅集成电路的新型、非常紧凑的水冷整体散热器。在功率密度为 790 W/cm2 时，测量到的最大基板温升比输入水温高出 71°C，与理论非常吻合。通过允许如此高的功率密度，散热器可以极大地增强超高速VLSI电路的可行性。
The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.