Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics
Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics
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多个独立栅极场效应晶体管 (MIGFET) - 多鳍 RF 混频器架构、三个独立栅极 (MIGFET-T) 操作和温度特性
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
J. Fossum
中科院分区：
文献类型：
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作者：
L. Mathew;Yang Du;S. Kaipat;M. Sadd;M. Zavala;T. Stephens;R. Mora;R. Rai;S. Becker;C. Parker;D. Sing;R. Shimer;J. Sanez;A. Thean;L. Prabhu;M. Moosa;B. Nguyen;J. Mogah;G. Workman;A. Vandooren;Z. Shi;M. Chowdhury;W. Zhang;J. Fossum
MIGFET器件具有多个栅极以独立地控制沟道区。这允许新的设备架构和应用。本文涉及三个新的方面讨论的第一次I）多鳍MIGFET器件具有两个独立的栅极，能够高电流驱动已经制造和证明作为一个RF混频器II）第一次MOSFET具有三个独立的栅极已经制造。这些器件可用于单晶体管存储器III）MIGFET已被用于表征温度对单电极和独立栅极模式的双栅极器件的影响。本文讨论的三个方面将对这些设备的未来应用产生重大影响。MIGFET可以与双栅极器件集成，使新型模拟电路能够在未来的数字CMOS收发器（单芯片无线电）中与多栅极数字CMOS进行缩放。MIGFET-T器件中的第三个独立栅极实现了新颖的存储器架构。温度特性揭示了双栅极Vt可以通过温度和第二栅极偏置两者来移位。这些数据使得能够对独立栅极器件上的温度效应进行紧凑建模，以评估利用MIGFET的这种特性的电路。
MIGFET devices have multiple gates to independently control the channel region. This allows for new device architectures and applications. This paper deals with three novel aspects discussed the first time I) Multi-fin MIGFET device with two independent gates capable of high current drives has been fabricated and demonstrated as a RF Mixer II) For the first time a MOSFET with three independent gates has been fabricated. These devices can be used in single transistor memories III) MIGFET has been used to characterize temperature effects on double gate devices in single electrode and independent gate modes. The three aspects discussed in the paper will have significant impact on future applications of these devices. The MIGFET can be integrated with double gate devices enabling novel analog circuits to scale with multi-gated digital CMOS in future digital CMOS transceiver (Single Chip Radio). The third independent gate in the MIGFET-T device enables novel memory architectures. Temperature characterization reveals the double gate Vt can be shifted both by temperature and by the second gate bias. This data enables compact modeling of temperature effects on independent gate devices to evaluate circuits that take advantage of this characteristic of the MIGFET.