High field electrical conduction and breakdown in silicon incorporated polyethylene films
High field electrical conduction and breakdown in silicon incorporated polyethylene films
复制标题
硅聚乙烯薄膜中的高场导电和击穿
DOI：
10.1063/1.349599
复制
发表时间：
1991
影响因子：
3.2
通讯作者：
K. Kao
中科院分区：
文献类型：
--
作者：
D. Liu;L. Kan;K. Kao
The current‐voltage (I‐V) characteristics of silicon‐incorporated polyethylene films fabricated by plasma polymerization have been measured at very high electric fields. The experimental results show that the electric conduction at high fields is due mainly to Fowler–Nordheim type tunneling injection of holes from the anode, and that the incorporation of silicon in polyethylene creates hole traps, thus suppressing the conduction current and enhancing the breakdown strength. The amount of positive space charge resulting from the hole trapping increases with increasing magnitude and duration of the applied field for a fixed silicon content, and increases with increasing silicon content for a fixed magnitude and duration of the applied field. This positive space charge tends to suppress the actual field at the hole injecting contact and to enhance the actual field at the electron injecting contact. For fields higher than a certain critical value, the rate of the current increase with field changes rapidly. T...
