Planar n + -in-n silicon pixel sensors for the ATLAS IBL upgrade
Planar n + -in-n silicon pixel sensors for the ATLAS IBL upgrade
复制标题
用于 ATLAS IBL 升级的平面 n-in-n 硅像素传感器
DOI：
10.1016/j.nima.2010.11.186
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发表时间：
2011
影响因子：
1.4
通讯作者：
T. Wittig
中科院分区：
文献类型：
--
作者：
C. Goessling;R. Klingenberg;D. Muenstermann;A. Rummler;G. Troska;T. Wittig
大型强子对撞机的ATLAS实验计划通过安装第4个像素层来升级其像素探测器，即可插入的b层IBL，其平均传感器半径仅为距光束轴32毫米。由于离光束非常近，IBL传感器在寿命结束时的辐射损伤可能高达5×1015neqcm−2。为了研究当前ATLAS像素传感器对IBL影响的辐射硬度和适用性，将ATLAS像素生产的n+ in-n硅像素传感器用反应堆中子照射到IBL设计影响，并在SPS上用介子和实验室中用来自90sr源的电子进行了测试。在1kV偏置电压下，每MIP收集的电荷超过10000个电子，这与条带传感器收集的数据一致。由于预期阈值为3000-4000个电子，该结果表明平面n+ in-n像素传感器具有足够的辐射强度，可以用作IBL传感器技术。
The ATLAS experiment at the LHC is planning to upgrade its pixel detector by the installation of a 4th pixel layer, the insertable b-layer IBL with a mean sensor radius of only 32mm from the beam axis. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5×1015neqcm−2at their end-of-life. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for IBL fluences, n+-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a90Sr source in the laboratory. The collected charge was found to exceed 10000 electrons per MIP at 1kV of bias voltage which is in agreement with data collected with strip sensors. With an expected threshold of 3000–4000 electrons, this result suggests that planar n+-in-n pixel sensors are radiation hard enough to be used as IBL sensor technology.