Deep levels and their impact on generation current in Sn-doped InGaAsN
Deep levels and their impact on generation current in Sn-doped InGaAsN
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Sn 掺杂 InGaAsN 中的深能级及其对产生电流的影响
DOI：
10.1063/1.1396832
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发表时间：
2001
影响因子：
3.2
通讯作者：
S. Kurtz
中科院分区：
文献类型：
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作者：
R. Kaplar;A. Arehart;S. Ringel;A. Allerman;R. Sieg;S. Kurtz
我们研究了1.05 eV， sn掺杂的n型In0.075Ga0.925As0.975N0.025晶格与GaAs匹配的深能级。样品采用金属有机化学气相沉积法生长。电容电压测量用于测定生长和退火后样品中的电子浓度，退火后观察到净电子浓度下降了约1.5×1017 cm−3。深能级瞬态光谱测量结果表明，在我们的材料中存在四个多数载流子电子陷阱，E1（从导带边缘延伸到大约EC - 0.2 eV的广泛分布），E2(0.36 eV), E3（0.34 eV）和E4(0.82 eV)，以及一个少数载流子空穴陷阱H1（0.71 eV）。结果表明，只存在于退火材料中的E2和H1可能分别是在电子发射和空穴发射条件下观察到的相同缺陷。电流-电压-温度测量表明其热活化能为0.35 eV…
We have investigated deep levels in 1.05 eV, Sn-doped, n-type In0.075Ga0.925As0.975N0.025 lattice-matched to GaAs. The samples were grown by metal–organic chemical vapor deposition. Capacitance–voltage measurements were used to determine the electron concentration in both as-grown and postgrowth annealed samples, and a decrease in net electron concentration of about 1.5×1017 cm−3 was observed following annealing. Deep level transient spectroscopy measurements are consistent with the presence of four majority-carrier electron traps, E1 (a broad distribution extending from the conduction band edge to approximately EC−0.2 eV), E2(0.36 eV), E3(0.34 eV), and E4(0.82 eV), as well as one minority-carrier hole trap, H1(0.71 eV), in our material. It is shown that E2 and H1, both of which are present in the annealed material only, are likely the same defect observed under conditions of electron and hole emission, respectively. Current–voltage-temperature measurements indicate a thermal activation energy of 0.35 eV ...
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
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作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y