Electron tunneling and band structure of SrTiO3 and KTaO3
Electron tunneling and band structure of SrTiO3 and KTaO3
复制标题
DOI：
10.1103/physrevb.2.3170
复制
发表时间：
1970-10-15
期刊：
影响因子：
--
通讯作者：
Sroubek, Z.
中科院分区：
文献类型：
--
作者：
Sroubek, Z.
研究了In-SrTiO_3：Nb和In-KTaO_3：Ca肖特基势垒在不同温度和不同载流子浓度下的隧穿特性。微分电阻率图显示在正向偏置处有一个明显的峰值，这是由于半导体导带底部的态密度的临界点所致。从峰的位置测得钛酸锶和钛酸钾的态密度有效质量分别为1.3m(0)和0.69m(0)。结合磁阻数据，确定了导带的宽度。SrTiO_3和KTaO_3的d带宽度分别约为3.4和6.8 eV。最后，在理论部分，讨论了过渡金属钙钛矿的导带结构。
The tunneling characteristics of In-SrTiO3:Nb and In-KTaO3:Ca Schottky barriers have been studied at different temperatures and for different concentrations of carriers. The plot of differential resistivity shows a distinct peak at forward biases which is attributed to the critical point in the density of states at the bottom of the semiconductor conduction band. From the position of the peak, the density-of-states effective masses (m)d have been found to be 1.3m(0) in SrTiO3 and 0.69m(0) in KTaO3. In combination with magneto resistance data, the widths of the conduction bands have been determined. The over-all widths of the d bands are about 3.4 and 6.8 eV for SrTiO3 and KTaO3, respectively. Finally, in the theoretical part, the conduction-band structure of transition-metal perovskites is discussed.