Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
复制标题
二次电子探测效率对单离子注入掺杂离子数量可控性的影响
DOI：
10.1143/jjap.38.3419
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发表时间：
1999
影响因子：
1.5
通讯作者：
I. Ohdomari
中科院分区：
文献类型：
--
作者：
T. Shinada;Atsuki Ishikawa;M. Fujita;K. Yamashita;I. Ohdomari
为了抑制半导体精细结构中掺杂离子数的波动，发展了单离子注入(SII)技术。它是基于带有斩波电极的聚焦离子束来提取单离子，从而能够将掺杂原子逐个注入到目标中。研究了二次电子探测效率对离子数可控性的影响，这是SII的关键技术。在考虑探测效率的情况下，测得的片状电子浓度与估算的值吻合较好。
The single ion implantation (SII) technique has been developed for the purpose of suppressing the fluctuation of the dopant ion number in semiconductor fine structures. It is based on a focused ion beam with a chopping electrode for the extraction of single ions, which enables implanting of dopant atoms one by one into a target. The influence of secondary electron detection efficiency, which is the key technology in SII, on the controllability of ion number has been investigated in this study. The measured sheet electron concentration coincides well with that estimated by taking the detection efficiency into account.