A 820GHz SiGe chipset for terahertz active imaging applications
A 820GHz SiGe chipset for terahertz active imaging applications
复制标题
用于太赫兹主动成像应用的 820GHz SiGe 芯片组
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
U. Pfeiffer
中科院分区：
文献类型：
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作者：
E. Öjefors;J. Grzyb;Yan Zhao;B. Heinemann;B. Tillack;U. Pfeiffer
微波和毫米波成像系统的空间分辨率可以通过将其工作频率增加到亚毫米波范围（300 GHz至3 THz）来提高。电子太赫兹源和接收器目前由III/V半导体和波导封装技术主导。乘法器和混频器在875 GHz下的输出功率为1.4mW [1]，在850 GHz下的转换损耗为9.25dB [2]，已在遥感和射电天文学应用中得到验证。然而，短距离有源太赫兹成像系统表现出不太严格的链路预算，从而为高度集成的低成本硅TX和RX前端开辟了新的机会。之前的电路设计示例包括采用45 nm工艺的410 GHz CMOS VCO，输出功率为− 47 dBm [3]，以及噪声系数为44 dB的650 GHz次谐波接收器[4]。在本文中，SiGe HBT器件技术的最新进展[5]被用来演示用于有源太赫兹成像应用的820 GHz TX/RX芯片组。
The spatial resolution of microwave and mmWave imaging systems can be improved by an increase of their operating frequencies into the submillimeter-wave range (300GHz to 3THz). Electronic terahertz sources and receivers are presently dominated by III/V semiconductor and waveguide packaging technologies. Multipliers and mixers capable of an output power of 1.4mW at 875GHz [1], as well as a conversion loss of 9.25dB at 850GHz [2], have been demonstrated in remote sensing and radio astronomy applications. However, short-range active terahertz imaging systems exhibit less stringent link-budgets, thus opening up new opportunities for highly integrated low-cost silicon TX and RX front-ends. Previous circuit design examples include a 410GHz CMOS VCO in a 45nm technology capable of an output power of −47dBm [3], as well as a 650GHz subharmonic receiver with a 44dB noise figure [4]. In this paper, recent advances in SiGe HBT device technology [5] are used to demonstrate a 820GHz TX/RX chipset for active terahertz imaging applications.