DOUBLE-LAYER QUANTUM HALL ANTIFERROMAGNETISM AT FILLING FRACTION V = 2/M WHERE M IS AN ODD INTEGER
DOUBLE-LAYER QUANTUM HALL ANTIFERROMAGNETISM AT FILLING FRACTION V = 2/M WHERE M IS AN ODD INTEGER
复制标题
填充分数 V = 2/M 时的双层量子霍尔反铁磁性，其中 M 是奇整数
DOI：
10.1103/physrevlett.79.917
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发表时间：
1997
影响因子：
8.6
通讯作者：
L. Zheng
中科院分区：
文献类型：
--
作者：
S. Sarma;S. Sachdev;L. Zheng
引入了填充分数为$\nu=2/m$($m$为奇数)的双层量子霍尔系统的低能作用量。层间反铁磁交换诱导出具有倾斜自旋有序的相和自旋-单线态相。得到了零温度相变和有限温度相变的普遍性质。我们计算了在Kosterlitz-Thouless相变中倾斜级消失的临界温度。指出了最近在$\nu=2$处的光散射实验的含义。
A low energy action for double-layer quantum Hall systems at filling fractions $\nu = 2/m$ ($m$ an odd integer) is introduced. Interlayer antiferromagnetic exchange induces a phase with canted spin order, and also a spin-singlet phase. Universal properties of zero and finite temperature transitions are obtained. We compute the critical temperature at which the canted order vanishes in a Kosterlitz-Thouless transition. Implications for recent light scattering experiments at $\nu = 2$ are noted.