Quantum Linear Magnetoresistance in Multi layer Epitaxial Graphene
Quantum Linear Magnetoresistance in Multi layer Epitaxial Graphene
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DOI：
10.1021/nl101797d
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发表时间：
2010-10-01
期刊：
影响因子：
10.8
通讯作者：
Gaskill, D. Kurt
中科院分区：
文献类型：
--
作者：
Friedman, Adam L.;Tedesco, Joseph L.;Gaskill, D. Kurt
我们报告的第一个观察到的线性磁电阻（LMR）在SiC上生长的多层外延石墨烯中，我们发现多层外延石墨烯从22K到室温都表现出很大的LMR，并且可以用纯量子力学模型来解释。我们将LMR的观察归因于外延生长的石墨烯薄膜中的不均匀性。高密度数据存储、磁传感器和执行器等领域
We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SIC We show that multilayer epitaxial graphene exhibits large LMR from 2 2 K up to room temperature and that it can be best explained by a purely quantum mechanical model We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene Film The large magnitude of the LMR suggests potential for novel applications in areas such as high-density data storage and magnetic sensors and actuators