Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3
Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonic free jets of CH3SiH3
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DOI：
10.1143/jjap.38.l301
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发表时间：
1999-03-15
期刊：
影响因子：
--
通讯作者：
Motooka, T
中科院分区：
文献类型：
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作者：
Ikoma, Y;Endo, T;Motooka, T
本文提出了一种利用甲基硅烷（CH_3SiH_3）的超声脉冲自由射流在Si（100）衬底上外延生长纳米级（类似于nm）~ 3C-SiC薄膜的新方法。结果表明，增加脉冲宽度可以抑制SiC/Si（100）界面处的凹坑形成，减少CH 3SiH 3脉冲数可以降低表面粗糙度。在小于约40 nm的薄膜区域中，观察到薄膜厚度与脉冲数之间的线性关系，而生长速率降低，并且厚度最终饱和以用于进一步的脉冲照射。
We have developed a new method for epitaxial growth of ultrathin (similar to nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than approximate to 40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.