Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films
Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films
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DOI：
10.1063/1.1570521
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发表时间：
2002-12
影响因子：
4
通讯作者：
Stephen Y. Wu;H. Liu;L. Gu;Rakesh Singh;L. Budd;M. Schilfgaarde;M. R. McCartney;D. J. Smith
中科院分区：
文献类型：
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作者：
Stephen Y. Wu;H. Liu;L. Gu;Rakesh Singh;L. Budd;M. Schilfgaarde;M. R. McCartney;D. J. Smith
我们报告的理论和实验研究铬掺杂氮化铝。密度泛函计算预测，孤立的Cr t2缺陷能级在AlN是1/3满，福尔斯约在midgap，并扩大到杂质带的浓度超过5%。替代型Al 1 −xCrxN随机合金（0.05 x 0.15）的居里温度预计超过600 K。在实验上，我们的特点和优化的分子束外延薄膜生长过程中，并观察到室温铁磁性的矫顽场，Hc，为120 Oe。测得的磁化率表明，超过33%的铬是磁活性在室温和40%在低温下。
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1−xCrxN random alloys with 0.05⩽x⩽0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oe. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.