AES AND XPS STUDY OF THIN RF-SPUTTERED TA2O5 LAYERS
AES AND XPS STUDY OF THIN RF-SPUTTERED TA2O5 LAYERS
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DOI：
10.1016/0169-4332(94)00538-9
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发表时间：
1995-02-01
影响因子：
6.7
通讯作者：
KOPRINAROVA, J
中科院分区：
文献类型：
--
作者：
ATANASSOVA, E;DIMITROVA, T;KOPRINAROVA, J
用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了Ta在Ar-O-2混合气体中反应溅射得到的硅基射频溅射Ta氧化物(4-75 nm)的元素组成和化学键。研究了气体成分(混合气体中O-2含量为0.1%~50%)和衬底温度(300 K或493K)对薄膜沉积的影响。还考虑了干氧气氛中沉积后退火的影响。结果表明，当O-2含量为10%时，有利于形成化学计量比Ta2O5和界面突变过渡区。退火效果强烈地依赖于沉积层的质量，它基本上导致了层的均匀化，并进一步改善了非完美氧化物的化学计量比。
The elemental composition and the chemical bonding in RF-sputtered tantalum oxide (4-75 nm) on Si, obtained by reactive sputtering of Ta in an Ar-O-2 mixture, have been studied by AES and XPS. The influence of the gas composition (O-2 content in the gas mixture 0.1%-50%) and of the substrate temperature (300 or 493 K) during the film deposition have been studied. The effect of post-deposition annealing in dry O-2 has also been considered. The results indicate that a content of 10% O-2 favours the formation of stoichiometric Ta2O5 and an abrupt interface transition region between Si and Ta2O5. The annealing effect depends strongly on the quality of the as-deposited layer, it leads basically to homogenization of the layers and improves additionally the stoichiometry of non-perfect oxides.