Ultralow-Power Smart Temperature Sensor with Subthreshold CMOS Circuits
Ultralow-Power Smart Temperature Sensor with Subthreshold CMOS Circuits
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DOI：
10.1109/ispacs.2006.364717
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发表时间：
2006-12
期刊：
影响因子：
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通讯作者：
K. Ueno;T. Hirose;T. Asai;Y. Amemiya
中科院分区：
文献类型：
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作者：
K. Ueno;T. Hirose;T. Asai;Y. Amemiya
提出了一种由亚阈值CMOS电路构成的智能温度传感器大规模集成电路。该传感器由偏置电路、PTAT电流发生器、A/D转换器和计数电路组成。所有电路的设计都是为了使电路中的MOSFET工作在亚阈值区，以实现超低功耗。PTAT电流发生器是传感器的关键部件，利用MOSFET在亚阈值区的特性来构造。SPICE仿真表明，该电路可作为一种超低功耗的智能温度传感器，功耗小于6 μ W。
We proposed a smart temperature sensor LSI consisting of subthreshold CMOS circuits. The sensor was composed of a bias circuit, a PTAT current generator, an A/D converter, and a counter circuit. All of the circuits were designed so that MOSFETs in the circuits would operate in the subthreshold region to achieve ultralow power consumption. The PTAT current generator was the key component of the sensor and was constructed by using the characteristics of a MOSFET in the subthreshold region. Simulation with SPICE demonstrated that the circuit can be used as a smart temperature sensor with ultralow-power consumption of 6 muW or less.