Particle deposition in indoor environments: analysis of influencing factors.

Particle deposition in indoor environments: analysis of influencing factors.
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DOI:
10.1016/j.jhazmat.2007.01.032
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发表时间:
2007-08
影响因子:
13.6
通讯作者:
Bin Zhao;Jun Wu
Bin Zhao;Jun Wu
中科院分区:
环境科学与生态学1区
文献类型:
--
作者:
Bin Zhao;Jun Wu

文献摘要

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本文利用解析模型和三维漂移通量模型,结合墙面颗粒沉积边界条件,对影响室内环境颗粒沉积的几个因素进行了分析。研究了近壁面流动条件、表面粗糙度和颗粒浓度分布对室内颗粒沉积的影响。通过解析模型对表面颗粒沉积进行建模,发现当颗粒尺寸较小时,靠近壁面和较粗糙表面的较大摩擦速度可能会导致较大的颗粒沉积速度,但当颗粒尺寸足够大时(范围达到实际摩擦速度,在本研究中约为1-5μm),摩擦速度和粗糙度的影响可以忽略不计。此外,三维数值模拟表明,即使对于相同的颗粒源和换气率,颗粒物浓度分布也可能有很大差异,从而导致不同的沉积颗粒通量。由于大多数情况下颗粒浓度分布可能不均匀,特别是对于通风房间,因此在分析室内环境中的颗粒沉积时,考虑颗粒浓度分布非常重要。基于分析还提出了一些颗粒沉积控制的建议或规则。
In this paper, several factors influencing particle deposition in indoor environments are analyzed with an analytical model and a three-dimensional drift flux model combined with the particle deposition boundary conditions for wall surfaces. The influences of flow conditions near the wall surfaces, surface roughness and particle concentration distribution on particle deposition indoors are studied. By modeling particle deposition onto surfaces with the analytical model, it is found that larger friction velocity near the wall surfaces and rougher surface may lead to larger particle deposition velocity when the particle size is small, but when particle size is large enough (the range is up to the actual friction velocity and in this study it is about 1–5μm), the influence of the friction velocity and roughness could be neglected. Furthermore, the three-dimensional numerical simulations indicate that particle concentration distribution may be very different even for the same particle source and air change rate, which cause a different deposited particle flux. As the particle concentration distribution may not be uniform in most cases, especially for the ventilated rooms, it is important to incorporate particle concentration distribution when analyzing particle deposition in indoor environments. Some suggestions or rules for particle deposition controlling are also presented based on the analysis.