Epitaxial growth and magnetic properties of Fe3O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates
Epitaxial growth and magnetic properties of Fe3O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates
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DOI：
10.1063/1.3484278
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发表时间：
2010-09
影响因子：
4
通讯作者：
H. Xiang;F. Shi;M. Rzchowski;P. Voyles;Y. Chang
中科院分区：
文献类型：
--
作者：
H. Xiang;F. Shi;M. Rzchowski;P. Voyles;Y. Chang
采用直流反应溅射法在TiN缓冲的Si（001）、Si（110）和Si（111）衬底上生长了外延Fe3O4薄膜。当在高于150 °C的衬底温度下生长时，Fe3O4膜和TiN缓冲层都是完全外延的，其中织构化的单相Fe3O4来自室温生长。初始溅射的Fe3O4形成核岛，然后合并成外延柱状晶粒，随着膜厚的增加。随着薄膜厚度的减小，磁化强度减小，矫顽场增大。在Si（001）衬底上外延的Fe_3O_4（001）薄膜不存在面内磁各向异性，而在Si（110）和Si（111）衬底上外延的Fe_3O_4薄膜表现出单轴面内磁各向异性。
Epitaxial Fe3O4 thin films were grown on TiN buffered Si(001), Si(110), and Si(111) substrates by dc reactive sputtering deposition. Both Fe3O4 films and TiN buffer are fully epitaxial when grown at substrate temperatures above 150 °C, with textured single phase Fe3O4 resulting from room temperature growth. The initial sputtered Fe3O4 formed nuclei islands and then coalesced to epitaxial columnar grains with increasing film thickness. The magnetization decreases and the coercive field increases with decreasing film thickness. There is no in-plane magnetic anisotropy of epitaxial Fe3O4(001) on Si(001) but Fe3O4 films grown on Si(110) and Si(111) substrates show uniaxial in-plane magnetic anisotropy.