Preparation and thermoelectric properties of semiconducting Zn4Sb3
Preparation and thermoelectric properties of semiconducting Zn4Sb3
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DOI：
10.1016/s0022-3697(96)00228-4
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发表时间：
1997-07-01
影响因子：
4
通讯作者：
Borshchevsky, A
中科院分区：
文献类型：
--
作者：
Caillat, T;Fleurial, JP;Borshchevsky, A
制备了半导体化合物β-Zn_4Sb_3的热压样品，并用X射线衍射和微探针分析对其进行了表征。测定了β-Zn_4Sb_3的一些物理性质，并在室温至650 K之间测量了其热电性能。在300 - 650 K温度范围内获得了异常低的热导率值，室温晶格热导率估计为6.5 W cm（-1）K-1。在450和670 K之间获得了高的热电优值（ZTs），并且在670 K的温度下获得了约1.3的最大值，这是在该温度下已知的最高值。化合物的稳定性进行了研究，通过几种技术，包括热重研究。结果表明，样品在氩气氛和静态真空下稳定性最高可达670 K，在动态真空下稳定性最高可达520 K。β-Zn4Sb3在300 - 670 K温度范围内的高热电性能填补了Bi2Te3基合金和PbTe基合金之间的p型最先进热电材料的ZT谱中的现有空白。这种材料相对便宜，可以用于更有效的热电发电机，例如用于废热回收和汽车工业应用。(C)1997 Elsevier Science Ltd.保留所有权利。
Hot-pressed samples of the semiconducting compound beta-Zn4Sb3 were prepared and characterized by X-ray and microprobe analysis. Some physical properties of beta-Zn4Sb3 were determined and its thermoelectric properties measured between room temperature and 650 K. Exceptionally low thermal conductivity values were obtained in the 300-650 K temperature range and the room temperature lattice thermal conductivity was estimated at 6.5 W cm(-1) K-1. High thermoelectric figures of merit (ZTs) were obtained between 450 and 670 K and a maximum of about 1.3 was obtained at a temperature of 670 K, the highest known at this temperature. The stability of the compound was investigated by several techniques, including thermogravimetric studies. The results showed that the samples were stable under argon atmosphere and static vacuum up to about 670 K and up to 520 K in dynamic vacuum. The high thermoelectric performance of beta-Zn4Sb3 in the 300-670 K temperature range fills the existing gap in the ZT spectrum of p-type state-of-the-art thermoelectric materials between Bi2Te3-based alloys and PbTe-based alloys. This material, relatively inexpensive, could be used in more efficient thermoelectric generators for waste heat recovery and automobile industry applications, for example. (C) 1997 Elsevier Science Ltd. All rights reserved.