Electron Spin Transport in a Metal-Oxide-Semiconductor Si Two-Dimensional Inversion Channel: Effect of Hydrogen Annealing on Spin-Scattering Mechanism and Spin Lifetime
Electron Spin Transport in a Metal-Oxide-Semiconductor Si Two-Dimensional Inversion Channel: Effect of Hydrogen Annealing on Spin-Scattering Mechanism and Spin Lifetime
复制标题
金属氧化物半导体硅二维反转通道中的电子自旋输运：氢退火对自旋散射机制和自旋寿命的影响
DOI：
10.1103/physrevapplied.18.064071
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发表时间：
2022
影响因子：
4.6
通讯作者：
and Ryosho Nakane
中科院分区：
文献类型：
--
作者：
Shoichi Sato;Masaaki Tanaka;and Ryosho Nakane
从子带中的电子分布、电子动量散射过程、电子动量寿命和自旋寿命方面对二维反转通道中的电子自旋输运进行了实验和理论研究。通过在各种偏压和温度条件（4、77、150 和 295 K）下测量沟道长度为 10 μm 的 a 基自旋金属氧化物半导体场效应晶体管，研究其电特性、电子电荷传输和自旋传输。特别是，在我们独特的程序中，在退火之前和之后测量同一器件，通过排除器件之间的变异性，定量地阐明较低和较高电子迁移率的自旋输运的变化。即使子带中电子的分布、电子迁移率和温度发生显着变化，自旋翻转概率（定义为电子动量寿命与自旋寿命之比）几乎恒定在约 1/25 000，这可能是由于 Elliot-Yafet 机制。随着电子迁移率和自旋漂移的增加，不同温度下估计的自旋守恒长度增加了 2-50 倍。凭借 4 K 的高电子迁移率，通过 10 μm 长的通道实现自旋传输，自旋守恒效率为 94%。
Electron spin transport in a two-dimensionalinversion channel is experimentally and theoretically studied in terms of electron distribution in the subbands, electron momentum scattering processes, electron momentum lifetime, and spin lifetime. The electrical properties, electron charge transport, and spin transport are investigated by measuring a-based spin metal-oxide-semiconductor field-effect transistor with a 10-μm channel length under various bias and temperature conditions (4, 77, 150, and 295 K). In particular, in our unique procedure, the same device is measured before and after annealing to quantitatively clarify the change in the spin transport with lower and higher electron mobilities, by excluding device-to-device variability. Even when the distribution of electrons in the subbands, electron mobility, and temperature are significantly changed, the spin-flip probability, which is defined as the ratio of electron momentum lifetime to spin lifetime, is nearly constant at approximately 1/25 000, probably due to the Elliot-Yafet mechanism. The estimated spin conservation lengths at various temperatures are increased 2–50 times with increases in both the electron mobility and spin drift. With a high electron mobility ofat 4 K, spin transport with a spin conservation efficiency of 94% is achieved through the 10-μm-long channel.