Finite-temperature conductance signatures of quantum criticality in double quantum dots
Finite-temperature conductance signatures of quantum criticality in double quantum dots
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DOI：
10.1103/physrevb.78.153304
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发表时间：
2008-04
影响因子：
3.7
通讯作者：
L. D. D. Silva-L.-D.-D.-Silva-145554809;K. Ingersent;N. Sandler;S. Ulloa
中科院分区：
文献类型：
--
作者：
L. D. D. Silva-L.-D.-D.-Silva-145554809;K. Ingersent;N. Sandler;S. Ulloa
我们研究了双量子点系统的线性电导，该系统由一个处于近藤区的相互作用点和一个与金属导线并联的有效非相互作用点组成。零偏压电导在温度$Tg0$的签名标记一对量子$（T=0）$之间的近藤屏蔽多体基态和非近藤基态的相变。值得注意的是，电导功能变得更加突出，增加$T$，这增强了通过在单个设备中的栅极电压的调谐访问的量子临界区的实验前景。
We study the linear conductance through a double-quantum-dot system consisting of an interacting dot in its Kondo regime and an effectively noninteracting dot connected in parallel to metallic leads. Signatures in the zero-bias conductance at temperatures $Tg0$ mark a pair of quantum $(T=0)$ phase transitions between a Kondo-screened many-body ground state and non-Kondo ground states. Notably, the conductance features become more prominent with increasing $T$, which enhances the experimental prospects for accessing the quantum-critical region through tuning of gate voltages in a single device.