Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms
Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms
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氧原子掺杂半绝缘多晶硅（SIPOS）的晶体学研究
DOI：
10.1063/1.325356
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发表时间：
1978
期刊：
影响因子：
--
通讯作者：
M. Kikuchi
中科院分区：
文献类型：
--
作者：
M. Hamasaki;T. Adachi;S. Wakayama;M. Kikuchi
用透射电子显微镜、X射线衍射和ESCA研究了掺杂氧原子并用作硅器件上钝化膜的热沉积硅膜。该薄膜含有至少两个相，硅微晶和氧化硅。沉积膜中微晶的尺寸取决于沉积温度和氧浓度。热处理引起晶体生长，主要取决于退火温度和弱的退火时间。微晶的晶格常数与其尺寸直接相关。发现沉积膜中的氧化硅相为SiO1.4。结果表明，当硅微晶直径小于10时，薄膜为非晶态，薄膜为“镶嵌"模型。
Thermally deposited silicon films doped with oxygen atoms and used as passivation films on silicon devices have been studied with transmission electron microscopy, x‐ray diffraction, and ESCA. The films contain at least two phases, silicon microcrystals and silicon oxide. The size of the microcrystals in as‐deposited films was dependent both on the deposition temperature and on the oxygen concentration. Heat treatment caused crystal growth which depended mainly on the annealing temperature and weakly on the annealing time. The lattice constant of the microcrystals was directly related to their size. The silicon oxide phase in as‐deposited films was found to be SiO1.4. The results suggest ’’mosaic’’ model of the films which are amorphous when the diameter of the silicon microcrystals was less than 10 A.