Novel highly-efficient and dress-free polishing technique with plasma-assisted surface modification and dressing

Novel highly-efficient and dress-free polishing technique with plasma-assisted surface modification and dressing
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新型高效免修整抛光技术,采用等离子体辅助表面改性和修整

DOI:
10.1016/j.precisioneng.2021.05.003
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发表时间:
2021
期刊:
Precision Engineering
影响因子:
--
通讯作者:
Yamamura Kazuya
Yamamura Kazuya
中科院分区:
--
文献类型:
--
作者:
Sun Rongyan;Nozoe Atsunori;Nagahashi Junji;Arima Kenta;Kawai Kentaro;Yamamura Kazuya

文献摘要

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抛光液广泛应用于难加工材料的抛光。但是,它也伴随着一些问题,如磨料的团聚和高处置成本。虽然使用固定磨料颗粒代替浆料可以解决这些问题,但磨损和固定磨料砂轮的负载问题,这导致材料去除率(MRR)降低,也需要解决。固结磨料磨具的自锐性已被广泛研究。然而,在超低抛光压力下,磨石的自锐性并不有效,超低抛光压力不足以破坏键以暴露新的磨料。在这项研究中,提出了一种新的无修整干法抛光工艺,它结合了等离子体辅助抛光和等离子体辅助修整使用Ar基CF4等离子体和陶瓷结合剂的磨石。对烧结AlN晶片进行了抛光实验。同时,利用CF4等离子体对陶瓷结合剂中的主要成分二氧化硅进行刻蚀,相当于对磨石表面进行连续修整。由于新的磨料可以不断暴露,因此保持了较高的MRR。因此,实现了无修整的高完整性抛光工艺。此外,CF4等离子体辐照使MRR增加了两倍,因为CF4等离子体不仅可以真实的时间修整磨石,而且可以将AlN改性为AlF3,其可以容易地去除。
Slurry is widely used in polishing difficult-to-machine materials. However, it is accompanied with some issues, such as the agglomeration of abrasives and high disposal cost. Although using fixed abrasive grains instead of slurry can solve these issues, the problems of wear and of loading fixed abrasive grinding stones, which result in decrease of material removal rate (MRR), also need to be solved. Many researches have been conducted on the self-sharpening of fixed abrasive grinding stones. However, the self-sharpening of grinding stones is not efficient with ultra-low polishing pressure, which is not large enough to break bonds so as to expose new abrasives. In this study, a novel dress-free dry polishing process was proposed, where it combines plasma-assisted polishing and plasma-assisted dressing using Ar-based CF4plasma and a vitrified-bonded grinding stone. Polishing experiments were conducted on sintered AlN wafer. Also, as the main component of vitrified bond materials, silica was etched using CF4plasma, which is equivalent to the continuous dressing of grinding stone surfaces. Since new abrasives could be constantly exposed, a high MRR was maintained. Thus, a dress-free high integrity polishing process was realized. Moreover, the CF4plasma irradiation increased the MRR twice, as CF4plasma can not only dress a grinding stone in real time but can also modify AlN to AlF3, which can easily be removed.