Disorder and the Urbach edge in dilute bismide GaAsBi
Disorder and the Urbach edge in dilute bismide GaAsBi
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DOI：
10.1063/1.4816435
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发表时间：
2013-07-22
影响因子：
4
通讯作者：
Tiedje, Tom
中科院分区：
文献类型：
--
作者：
Gogineni, Chaturvedi;Riordan, Nathaniel A.;Tiedje, Tom
在10-300K温度范围和0.1-1000 mW泵浦功率范围内，用光致发光光谱研究了GaAsBi/GaAs量子阱禁带以下尾态的特征发射。尾态表现出两个特征能量：一个较深的能量在29 meV时与温度无关，另一个较接近带隙的能量与温度有关，在10K-29 meV的室温下从17 meV开始展宽。尾态被认为是由于Bi态的局域化以及合金涨落和聚集在V族亚晶格上的无序效应造成的。(C)2013 AIP出版有限责任公司。[http://dx.doi.org/10.1063/1.4816435]
The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum wells is studied using photoluminescence spectroscopy over a 10-300K temperature range and a 0.1-1000mW pump power range. The tail states exhibit two characteristic energies: A deeper one that is temperature independent at 29meV and one nearer to bandgap that is temperature dependent, broadening from 17meV at 10K-29meV at room temperature. The tail states are thought to originate from localization of the Bi states and disorder effects due to alloy fluctuations and clustering on the group-V sublattice. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816435]