Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions
Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions
复制标题
DOI：
10.1063/5.0002068
复制
发表时间：
2020-04-06
影响因子：
4
通讯作者：
Takagi, Hideki
中科院分区：
文献类型：
--
作者：
Matsumae, Takashi;Kurashima, Yuichi;Takagi, Hideki
表面功能化的β-Ga 2 O3和金刚石衬底直接结合在250 ℃的大气中退火。在键合之前，分别通过氧等离子体辐照和H2SO 4/H2 O2清洗对β-Ga 2 O3和金刚石表面进行OH封端。OH-封端的表面彼此接触后，通过热脱水反应形成直接键合。由于β-Ga_2 O_3与金刚石表面形成了化学键，退火后的试样抗剪强度可达14 MPa。界面结构分析表明，β-Ga_2 O_3与金刚石表面原子键合，没有纳米孔洞、裂纹或任何中间层。β-Ga 2 O3和金刚石衬底结合，除了最外表面外，结晶度没有任何严重损失。我们相信β-Ga_2 O_3/金刚石异质结将有助于β-Ga_2 O_3器件的大功率应用。
Surface-functionalizedbeta -Ga2O3 and diamond substrates were directly bonded by annealing at 250 degrees C in atmospheric air. Prior to bonding, thebeta -Ga2O3 and diamond surfaces were OH-terminated by oxygen plasma irradiation and H2SO4/H2O2 cleaning, respectively. After contacting the OH-terminated surfaces with each other, direct bonding was formed by a thermal dehydration reaction. The annealed specimen had a shear strength of 14MPa because of the generation of chemical bonds betweenbeta -Ga2O3 and diamond surfaces. The analysis of interface structures revealed that thebeta -Ga2O3 and diamond surfaces were atomically bonded without nano-voids, cracks, or any intermediate layer. The beta -Ga2O3 and diamond substrates were bonded without any serious loss in crystallinity except for the outermost surfaces. We believe that thebeta -Ga2O3/diamond heterostructure can contribute to the high-power applications ofbeta -Ga2O3 devices.