Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal
Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal
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Ga2Se3 单晶电导率和霍尔效应的温度依赖性
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
I. Ashraf
中科院分区：
文献类型：
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作者：
A. Belal;H. A. El‐shaikh;I. Ashraf
在 398 K 至 673 K 的温度范围内研究了从熔体生长的单晶的电导率 () 和霍尔系数 (R H )。我们的研究表明我们的样品是 p 型导电的。以图形方式显示了霍尔迁移率和载流子浓度对温度的依赖性。计算发现禁带能隙为1.79 eV。杂质能级的电离能大约等于0.32 eV。在398 K 时，迁移率等于8670 cm 2 V -1 s -1 ，并且可以在低温范围内通过定律μ = at n (n = 1.6) 来描述。在高温范围内，采用μ=bT−m定律（当m=1.67）时，迁移率降低。该结果表明，在低温范围内，主要作用是电离杂质原子的散射，而在高温范围内，主要作用是电子对晶格振动（声子）的散射。 398 K 时自由载流子浓度约为 1.98 × 10 7 cm -3
Electrical conductivity () and Hall coefficient (R H ) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p-type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm 2 V −1 s −1 and could described by the law μ = at n (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT −m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10 7 cm −3