Polycrystalline defects; origin of leakage current; in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
Polycrystalline defects; origin of leakage current; in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
复制标题
通过超高灵敏发射显微镜和同步加速器 X 射线形貌识别卤化物气相外延 (001) β-Ga2O3 肖特基势垒二极管中的多晶缺陷；
DOI：
10.35848/1882-0786/abde74
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发表时间：
2021
影响因子：
2.3
通讯作者：
Makoto Kasu
中科院分区：
文献类型：
--
作者：
Sayleap Sdoeung;Kohei Sasaki;Katsumi Kawasaki;Jun Hirabayashi;Akito Kuramata;Makoto Kasu
