Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide
Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide
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DOI：
10.1109/50.557567
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发表时间：
1997-03-01
影响因子：
4.7
通讯作者：
Zeni, L
中科院分区：
文献类型：
--
作者：
Cutolo, A;Iodice, M;Zeni, L
本文从理论上分析了一种集成在SOI(绝缘体上硅)光波导中的新型硅光幅相调制器，该调制器基于三端电子结构，与传统的p-i-n二极管调制器相比具有一定的优势。该器件利用自由载流子色散效应产生所需的折射率和吸收系数变化。利用Medici二维(2-D)半导体器件模拟器分析了电操作，参考了注入到光通道中的自由载流子浓度、其均匀性以及所需的电流密度和电功率，利用有限差分法、EIM(有效折射率法)和BPM(光束传播法)工具进行了光学研究，对我们的器件的性能进行了全面的评价。我们报道了幅度调制器和相位调制器的结果，注意了静态和动态特性，特别是20%的幅度调制，注入功率约为126 mW，理论上可以获得5.6 ns的开关时间。此外，作为一种相位调制器，该器件表现出很高的优值系数，预测每毫米每伏感生相移约215度。注入功率约为43 mW，开关时间小于3.5 ns。
In this paper we analyze, from a theoretical point of view, a novel silicon optical amplitude-phase modulator integrated into a SOI (silicon on insulator) optical waveguide and based on a three terminal electronic structure which gives rise to definite advantages in comparison with classical p-i-n diode based modulator, The proposed device utilizes the free carrier dispersion effect to produce the desired refractive index and absorption coefficient variations, The MEDICI two-dimensional (2-D) semiconductor device simulator has been used to analyze the electrical operation, with reference to the injected free carriers concentration into the optical channel, its uniformity and the required current density and electrical power, The optical investigation was carried out by means of FDM (finite difference method), EIM (effective index method), and BPM (beam propagation method) tools, giving rise to a complete evaluation of the properties of our device, We report the results for both the amplitude and phase modulators, paying attention to the static and the dynamic behavior, In particular, an amplitude modulation of 20%, with an injection power of about 126 mW, and a switching time of 5.6 ns can be achieved theoretically, Furthermore, as a phase modulator, the device exhibits a very high figure of merit, predicting an induced phase shift per volt per millimeter of about 215 degrees, for a injection power of about 43 mW, and a switching time shorter than 3.5 ns.