A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors
A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors
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DOI：
10.35848/1347-4065/ab7e77
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发表时间：
2020-04
影响因子：
1.5
通讯作者：
Yen. Le thi;Y. Kamakura;N. Mori
中科院分区：
文献类型：
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作者：
Yen. Le thi;Y. Kamakura;N. Mori
从理论上研究了 InAs/GaSb II 型超晶格 (SL) 势垒红外光电探测器的暗电流特性。势垒光电探测器由接触层、势垒层和有源区（n 型）组成，使用基于漂移扩散的器件模拟器评估两种不同的工程结构，即 pBn 和 nBn。结果表明，与无势垒的p-i-n光电二极管相比，两种结构都能有效降低暗电流，并详细讨论了对势垒掺杂密度的依赖性。两种结构中都存在最小化暗电流的最佳掺杂密度，但暗电流产生的机制不同。
The dark current characteristics in InAs/GaSb type-II superlattice (SL) barrier infrared photodetectors are theoretically investigated. The barrier photodetector is composed of a contact layer, a barrier layer, and an active region (n type), for which two different engineered structures, i.e., called pBn and nBn, are evaluated using the drift-diffusion-based device simulator. It is shown that both structures can effectively reduce the dark current compared to the p-i-n photodiode without barrier, and the dependence on the barrier doping density are discussed in detail. There exists an optimum doping density to minimize the dark current in both structures, but the different mechanisms contribute to the dark current.