A new physics-based self-heating effect model for 4H-SiC MESFETs
A new physics-based self-heating effect model for 4H-SiC MESFETs
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一种新的基于物理的 4H-SiC MESFET 自热效应模型
DOI：
10.1088/1674-1056/17/12/048
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发表时间：
2008-12
影响因子：
1.7
通讯作者：
吕红亮
中科院分区：
文献类型：
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作者：
吕红亮
基于面向分析和计算机辅助设计(CAD)的漏电流模型，提出了一种新的4H-SiCMESFET自热效应模型。该模型给出了4H-SiCMESFET低场电子迁移率和不完全电离率随温度变化的面向电路的表达式，用于估算4H-SiCMESFET的自热效应。对该模型进行了验证，模拟结果与具有自热效应的直流I-V曲线的测量数据吻合较好。
A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I – V curves with the self-heating effect is obtained.