Atomic-resolution quantitative composition analysis using scanning transmission electron microscopy Z-contrast experiments
Atomic-resolution quantitative composition analysis using scanning transmission electron microscopy Z-contrast experiments
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DOI：
10.1103/physrevb.71.235303
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发表时间：
2005-06-01
影响因子：
3.7
通讯作者：
Grillo, V
中科院分区：
文献类型：
--
作者：
Carlino, E;Grillo, V
本文导出了一种用原子分辨率定量测量基质中化学物种分布的一般方法，并将其应用于由埋在砷化镓基质中的一层硅组成的实例研究。在Si/GaAs超晶格上进行的模拟和实验表明，高角度环形暗场成像强度与衬底中Si的浓度呈准线性关系。并与相同样品的横截面扫描隧道显微镜的结果进行了比较。
Here a general approach to measure quantitatively with atomic resolution the distribution of a chemical species in a host matrix is derived and applied to a case study consisting of a layer of Si buried in a GaAs matrix. Simulations and experiments performed on Si/GaAs superlattices demonstrate a quasilinear dependence of the high-angle annular dark-field image intensity on the concentration of Si in the GaAs matrix. The results have been compared with those obtained by cross-sectional scanning tunneling microscopy on the same specimens.