Strained-layer relaxation in fcc structures via the generation of partial dislocations.
Strained-layer relaxation in fcc structures via the generation of partial dislocations.
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DOI：
10.1103/physrevlett.66.739
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发表时间：
1991-02
影响因子：
8.6
通讯作者：
Hwang;Schwarz;Ravi;Bhat;Chen
中科院分区：
文献类型：
--
作者：
Hwang;Schwarz;Ravi;Bhat;Chen
确定了应变III-V族半导体结构中的新应变释放机制。所提出的机制的签名缺陷是一个微孪晶沿着{111}平面跨越嵌入应变层。当应变层内部产生两个具有1/6型反平行Burgers矢量的部分位错并滑动到相对界面时，在它们之间留下堆垛层错，可以形成这种缺陷
A new strain-relief mechanism in strained III-V semiconductor structures is identified. The signature defect of the proposed mechanism is a microtwin along the {111} plane spanning an embedded strained layer. This defect can form when two partial dislocations with antiparallel Burgers vectors of the 1/6 type are generated inside the strained layer and glide to the opposite interfaces, leaving a stacking fault between them