Study on threading dislocations blocking mechanism of GaN∕AlxGa1−xN superlattices
Study on threading dislocations blocking mechanism of GaN∕AlxGa1−xN superlattices
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DOI：
10.1063/1.2929377
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发表时间：
2008-05
影响因子：
4
通讯作者：
L. Sang;Zhixin Qin;H. Fang;X. Zhou;Z. Yang;B. Shen;G. Zhang
中科院分区：
文献类型：
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作者：
L. Sang;Zhixin Qin;H. Fang;X. Zhou;Z. Yang;B. Shen;G. Zhang
在GaN和AlyGa1−yN外延层之间生长了具有不同周期厚度tp的GaN闪烁AlxGa1−xN超晶格（SL）。随着tp的增加，穿透位错（TDs）的阻塞效应变得更加明显。透射电子显微镜分析表明，由于应变，TD倾向于在SL中弯曲并在GaN威尔斯中终止。X射线衍射测量也验证了GaN威尔斯阱作为TDs滤波器的作用。在SL中的TDs的阻断导致松弛因子R（SL）的异常降低与TP的增加。
GaN∕AlxGa1−xN superlattices (SLs) with different period thicknesses tp were grown as interlayers between GaN and AlyGa1−yN epilayers. The effect of threading dislocations (TDs) blocking became more evident with increasing tp. Transmission electron microscopy analysis shows that TDs are inclined to be bended in SLs and terminated in GaN wells as a result of strain. X-ray diffraction measurement also validated that GaN wells played a more important role as a TDs filter. The blocking of TDs in SLs resulted in an abnormal decrease in relaxation factors R(SLs) with increasing tp.