Microscopic charging and in-gap states in superconducting granular aluminum
Microscopic charging and in-gap states in superconducting granular aluminum
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DOI:
10.1103/physrevb.102.104502
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发表时间:
2019-11
影响因子:
3.7
通讯作者:
Fang Yang;Thomas Gozlinski;Tim Storbeck;L. Grünhaupt;I. Pop;W. Wulfhekel
中科院分区:
文献类型:
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作者:
Fang Yang;Thomas Gozlinski;Tim Storbeck;L. Grünhaupt;I. Pop;W. Wulfhekel
We present scanning tunneling microscope (STM) measurements of the local electronic structure of superconducting granular aluminium films. The STM spectra show a homogeneously increased superconducting gap compared to that of aluminum, both near and above the Mott resistivity ${\ensuremath{\rho}}_{\mathrm{M}}\ensuremath{\approx}400\ensuremath{\mu}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\mathrm{cm}$. Above ${\ensuremath{\rho}}_{\mathrm{M}}$ we find Coulomb charging effects, a first indication of electrical decoupling, and in-gap states on individual grains, which could contribute to flux noise and dielectric loss in quantum devices. We also observe multiple low-energy states outside the gap, which indicate bosonic excitations of an energy below twice the superconducting gap.