Helical nanoholes bored in silicon by wet chemical etching using platinum nanoparticles as catalyst
Helical nanoholes bored in silicon by wet chemical etching using platinum nanoparticles as catalyst
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DOI：
10.1149/1.2109347
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发表时间：
2005-01-01
影响因子：
--
通讯作者：
Matsumura, M
中科院分区：
文献类型：
--
作者：
Tsujino, K;Matsumura, M
在含有HF和H2O2的溶液中，采用湿法化学蚀刻方法，在硅表面沉积Pt纳米粒子作为催化剂，在硅表面钻出直径为20 ~ 200nm的螺旋孔和圆柱形孔。在低浓度HF溶液中，填充微孔硅的圆锥形孔洞中心的圆柱孔洞优先向< 100 >方向生长。另一方面，在含有高浓度HF的溶液中，螺旋孔在各个方向上生长，但没有形成厚的微孔硅层。(c) 2005电化学学会。
Helical as well as cylindrical holes with diameters ranging from 20 to 200 nm were bored in silicon by wet chemical etching in a solution containing HF and H2O2 using Pt nanoparticles deposited on the silicon surface before the etching process as a catalyst. In a solution containing HF at a low concentration, cylindrical holes grew preferentially in the < 100 > direction at the centers of cone-shaped concavities filled with microporous silicon. On the other hand, in a solution containing HF at a high concentration, helical holes grew in various directions without forming a thick microporous silicon layer. (c) 2005 The Electrochemical Society.