Patterns and localized structures in bistable semiconductor resonators
Patterns and localized structures in bistable semiconductor resonators
复制标题
双稳态半导体谐振器中的图案和局部结构
DOI：
10.1103/physreva.61.063818
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发表时间：
2000
影响因子：
2.9
通讯作者：
France.
中科院分区：
文献类型：
--
作者：
V. Taranenko;I. Ganne;R. Kuszelewicz;C. O. W. Ptb;H Germany;Cnet;France.
报道了大菲涅耳数无源非线性半导体谐振器的空间开关动力学和稳态结构的实验结果。观察和研究了扩展模式和开关前沿的动态特性。给出了结构局部化的证据。
We report experiments on spatial switching dynamics and steady state structures of passive nonlinear semiconductor resonators of large Fresnel number. Extended patterns and switching front dynamics are observed and investigated. Evidence of localization of structures is given.