Oxide Crystal Structure with Square-Pyramidally Coordinated Vanadium for Integrated Electronics Manufactured at Ultralow Processing Temperatures
Oxide Crystal Structure with Square-Pyramidally Coordinated Vanadium for Integrated Electronics Manufactured at Ultralow Processing Temperatures
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DOI：
10.1021/acssuschemeng.6b03111
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发表时间：
2017-06
影响因子：
8.4
通讯作者：
M. Valant;Jasminka Popović;M. Mihelj;Sanja Burazer;A. Altomare;A. Moliterni
中科院分区：
文献类型：
--
作者：
M. Valant;Jasminka Popović;M. Mihelj;Sanja Burazer;A. Altomare;A. Moliterni
这项研究描述了一种用于新兴的ULTCC-I技术(超低温共烧陶瓷技术)的新介质材料的有针对性的合成，这导致了PbTeV2O8相的发现。粉末数据的结构溶液表明，该相属于未知的结晶学家族，由V5+离子以不寻常的方锥配位方式形成。它的特点是加工温度非常低，可以与铝电极集成，甚至可能与聚合物和纸张基材集成。PbTeV2O8相的介电特性和工艺参数使其有资格作为中介电电容器集成到ULTCC-I模块中。
The study describes a targeted synthesis of a new dielectric material for an emerging ULTCC-I technology (ultralow temperature co-fired ceramic technology), which resulted in discovery of a PbTeV2O8 phase. A structural solution from powder data showed that the phase belongs to no known crystallographic family and is formed from V5+ ions in an unusual square-pyramidal coordination. It is characterized by very low processing temperatures that enable integration with Al electrodes and, potentially, even with polymer and paper substrates. Dielectric properties in combination with processing parameters qualify the PbTeV2O8 phase for integration, as midpermittivity capacitors, in ULTCC-I modules.