Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy
Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy
复制标题
使用激光分子束外延在蓝宝石 (0001) 上生长的外延 GaN 层的结构和电子特性
DOI：
10.1088/2053-1591/1/3/035903
复制
发表时间：
2014
影响因子：
2.3
通讯作者：
K. Maurya
中科院分区：
文献类型：
--
作者：
S. S. Kushvaha;M. Kumar;M. Maheshwari;A. K. Shukla;P. Pal;K. Maurya
通过超高真空激光辅助分子束外延（MBE）系统在蓝宝石（0001）衬底上生长外延GaN膜，该系统使用GaN固体靶，在各种生长条件下具有1.3J cm-2的激光能量密度。利用高分辨X射线衍射、场发射扫描电子显微镜和扫描隧道显微镜在室温下研究了生长温度、层厚和生长速率对GaN层结构特性的影响。在700 °C下生长的外延GaN层表现出良好的结晶特性，根据X射线摇摆曲线测量计算的螺旋位错密度为3.1 × 108 cm−2。用X射线光电子能谱研究了GaN薄膜的电子性质，如芯能级和价带。GaN层的化学组成使用芯能级光谱法确定。
Epitaxial GaN films were grown on sapphire (0001) substrates by an ultra-high vacuum laser assisted molecular beam epitaxy (MBE) system using GaN solid target with laser energy density of ∼3 J cm−2 at various growth conditions. The influence of growth temperature, layer thickness and growth rate on the structural properties of the GaN layers have been studied using high resolution x-ray diffraction, field emission scanning electron microscopy and scanning tunneling microscopy at room temperature. The epitaxial GaN layers grown at 700 °C exhibited good crystalline properties with a screw dislocation density of 3.1 × 108 cm−2 as calculated from the x-ray rocking curve measurements. The electronic properties such as core levels and valence band of GaN film were examined using x-ray photoelectron spectroscopy. Chemical composition of the GaN layer was determined using core level spectroscopy.
影响因子：
3.2
作者：
D. Skuridina;D. V. Dinh;B. Lacroix;P. Ruterana;M. Hoffmann;Z. Sitar;M. Pristovsek;M. Kneissl;P. Vogt
通讯作者：
D. Skuridina;D. V. Dinh;B. Lacroix;P. Ruterana;M. Hoffmann;Z. Sitar;M. Pristovsek;M. Kneissl;P. Vogt