Electro-optical characterization of epitaxial and polycrystalline CoSi2 Schottky diodes
Electro-optical characterization of epitaxial and polycrystalline CoSi2 Schottky diodes
复制标题
外延和多晶 CoSi2 肖特基二极管的电光特性
DOI：
10.1117/12.218245
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
R. Mertens
中科院分区：
文献类型：
--
作者：
E. Roca;K. K. Larsen;S. Kolodinski;R. Mertens
测量了硅化物厚度相近的多晶和外延CoSi2/Si肖特基二极管的红外响应。对于多晶二极管，量子效率被发现比外延二极管高两倍，尽管这两种类型的二极管呈现非常相似的势垒高度。观察到的改善归因于激发载流子的晶界散射。
The infrared response of polycrystalline and epitaxial CoSi2/Si Schottky diodes with similar silicide thickness has been measured. For the polycrystalline diodes the quantum efficiency is found to be two times higher than for the epitaxial diodes, although both types of diodes present very similar barrier height. The observed improvement is attributed to grain boundary scattering of the excited carriers.