Lattice distortion of porous Si by Li absorption using two-dimensional photoelectron diffraction
Lattice distortion of porous Si by Li absorption using two-dimensional photoelectron diffraction
复制标题
使用二维光电子衍射研究 Li 吸收引起的多孔 Si 的晶格畸变
DOI：
10.1007/s10853-013-7799-2
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发表时间：
2013
影响因子：
4.5
通讯作者：
H. Daimon
中科院分区：
文献类型：
--
作者：
E. S. Nouh;S. N. Takeda;F. Matsui;K. Hattori;T. Sakata;N. Maejima;H. Matsui;H. Matuda;T. Matsushita. L. Toth;M. Morita;S. Kitagawa;R. Ishii;M. Fujita;K. Yasuda;H. Daimon
利用反射式高能电子衍射（RHEED）、二维光电子衍射和显示式球镜分析仪与圆偏振软X射线相结合的体视原子显微镜，研究了多孔硅的锂化和脱锂反应.在氢氟酸乙醇溶液中，通过电化学腐蚀p型硅（001）片制备了纳米多孔硅层。使用SEM观察到的所生长的多孔硅的形态填充有约9nm的孔。这种多孔硅还保留了其被蚀刻的晶片的晶体取向，并且具有可见光致发光的光学活性。从Si（001）表面测量的RHEED图案和2π球面度Si 2p光电子衍射图案表明，锂化使晶格常数增加，并且脱锂使晶格常数的变化恢复到其原始值。
Lithiation and delithiation of porous silicon were studied using reflection high energy electron diffraction (RHEED), two-dimensional photoelectron diffraction, and a stereo atom-scope, which is realized by the combination of a display-type spherical mirror analyzer and circularly polarized soft X-ray. A nanosized porous silicon layer was prepared by electrochemical etching of p-type silicon (001) wafer in ethanolic solutions containing hydrofluoric acid. The morphology of the as-grown porous silicon as observed using SEM was filled with about 9 nm holes. This porous silicon also retains the crystallographic orientation of the wafer from which it was etched and is optically active with visible photoluminescence. The measured RHEED pattern and 2πsteradian Si 2p photoelectron diffraction pattern from Si (001) surface showed an increase in lattice constant by lithiation, and that change in lattice constant was restored to its original values by delithiation.