Localization Exponent for the Second Landau Level in the Quantum Hall Effect
Localization Exponent for the Second Landau Level in the Quantum Hall Effect
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DOI：
10.1088/0256-307x/25/3/075
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发表时间：
2008-03
影响因子：
3.5
通讯作者：
Tu Tao;Yong-Jie Zhao;Xiao-Jie Hao;Cheng-You Wang;Guoping Guo
中科院分区：
文献类型：
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作者：
Tu Tao;Yong-Jie Zhao;Xiao-Jie Hao;Cheng-You Wang;Guoping Guo
在温度高于 1K 时，我们测量了量子霍尔平台-平台跃迁区域中纵向电阻率 ρxx、霍尔电阻率 ρxy 的温度依赖性。采用基于可变范围跳跃理论的方法提取定位指数v。我们发现第二朗道能级上的量 v ≈ 2.3，这被证明是准确的通用的。
At temperature above 1K, we measured the temperature dependence of the longitudinal and Hall resistivity ρxx, ρxy in the regime of the quantum Hall plateau-to-plateau transitions. The localization exponent v is extracted with an approach based on the variable range hopping theory. We find the quantity v ≈ 2.3 at the second Landau level, which is proven to be accurately universal.