Trap level characteristics of rare‐earth luminescence centers in III–V semiconductors
Trap level characteristics of rare‐earth luminescence centers in III–V semiconductors
复制标题
III-V族半导体中稀土发光中心的陷阱能级特征
DOI：
10.1063/1.361741
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发表时间：
1996
影响因子：
3.2
通讯作者：
K. Takahei
中科院分区：
文献类型：
--
作者：
A. Taguchi;K. Takahei
我们将一个多声子辅助的能量转移模型应用于Er掺杂GaAs、Nd掺杂GaP和Nd掺杂GaAs，该模型已在Yb掺杂InP系统中得到验证。通过应用该模型，可以使用两个参数计算4f-壳层发光的衰减时间的温度依赖性。一个参数是稀土4f壳层和半导体主体之间的能量转移概率，另一个参数是能量转移过程中必须补偿的能量。这两个参数的值通过将计算的温度依赖性拟合到实验获得的结果来确定。计算的温度依赖性与实验结果吻合良好，表明这些材料中的能量传递机制类似于在InP：Yb。必须补偿的能量的估计值使我们能够估计负责稀土4f壳层内发光的能级位置。转变的价值观…
We have applied a multiphonon‐assisted energy transfer model, which has been verified for the Yb‐doped InP system, to Er‐doped GaAs, Nd‐doped GaP, and Nd‐doped GaAs. By applying this model, the temperature dependence of the decay time of the 4f‐shell luminescence can be calculated using two parameters. One parameter is the energy transfer probability between the rare‐earth 4f shell and the semiconductor host, and the other is the energy which has to be compensated for in the energy transfer processes. The values of these two parameters were determined by fitting the calculated temperature dependence to the experimentally obtained results. The calculated temperature dependences fit with the experimental results well, showing that the energy transfer mechanism in these materials is similar to that in InP:Yb. The estimated values of energy which have to be compensated for enable us to estimate the energy level positions responsible for the rare‐earth intra‐4f‐shell luminescence. The values of the transition ...