Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering
Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering
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DOI：
10.1016/j.jallcom.2012.02.122
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发表时间：
2012-07
影响因子：
6.2
通讯作者：
H. J. Quah;K. Cheong
中科院分区：
文献类型：
--
作者：
H. J. Quah;K. Cheong
研究了不同沉积后退火（PDA）气氛[O2、N2 O、N2、合成气（95%N2 - 5%H2）和Ar]对射频磁控溅射法在Si衬底上沉积的氧化钇（Y2 O3）薄膜的物理特性和MOS特性的影响。X射线衍射（XRD）分析表明，样品中存在Y2 O3和硅酸钇（Y2 Si 2 O 7）相，傅里叶变换红外光谱（FTIR）分析表明样品中存在Y-O、Si-O和Si-Si等化学官能团。XRD和FTIR分别检测到Y2 Si 2 O 7相和Si-O键，表明界面层由Y2 Si 2 O 7和SiO2组成。在不同的环境中退火的Y2 O3栅氧化层的MOS特性，然后与物理结果相关联。据认为，O2退火样品表现出最高的介电击穿电压，以及最低的有效氧化物电荷，界面陷阱密度，和总界面陷阱密度。控制这些栅极氧化物中的漏电流的电流传导机制也已经使用非线性曲线拟合方法建立。
Effects of different post-deposition annealing (PDA) ambient [O2, N2O, N2, forming gas (95% N2-5% H2), and Ar] on the physical and metal–oxide–semiconductor (MOS) characteristics of yttrium oxide (Y2O3) films deposited on Si substrate by RF magnetron sputtering had been reported. X-ray diffraction (XRD) had revealed the presence of Y2O3and yttrium silicate (Y2Si2O7) phases while Fourier transform infrared spectrometer (FTIR) had successfully identified chemical functional groups of Y-O, Si-O, and Si-Si. The detection of Y2Si2O7phase and Si-O bondings by XRD and FTIR, respectively, had suggested the formation of interfacial layer comprising of Y2Si2O7and SiO2. The MOS characteristics of annealed Y2O3gate oxide in different ambient were then correlated with the physical results. It was perceived that O2annealed sample had demonstrated the highest dielectric breakdown voltage as well as the lowest effective oxide charge, interface trap density, and total interface-trap density. Current conduction mechanisms that governed the leakage current in these gate oxides had also been established using a non-linear curve fitting method.