Transport processes in the oxidation of Ni studied using tracers in growing NiO scales
Transport processes in the oxidation of Ni studied using tracers in growing NiO scales
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DOI：
10.1007/bf00812776
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发表时间：
1979-12
影响因子：
2.2
通讯作者：
A. Atkinson;R. I. Taylor;P. D. Goode
中科院分区：
文献类型：
--
作者：
A. Atkinson;R. I. Taylor;P. D. Goode
已经开发出实验技术来确定厚度范围为 ~0.1 至 100 μ 的 NiO 尺度中 Ni63 和 O18 示踪剂的分布。这些已用于研究在 500–1300°C 温度范围内，{100} Ni 晶体和多晶 Ni 上的 Ni 和 O 传输。在 1000°C 下在 {100} Ni 晶体上生长的 NiO 均匀且致密，并通过空位机制通过 Ni 在 NiO 中的体扩散而生长。在低于 800°C 的温度下，主要传输机制是 Ni 在 NiO 中的短路扩散。在所有温度下，氧的短路扩散都有助于多晶镍上氧化皮的生长，并导致双相氧化皮内层的生长。氧扩散路径被认为是由生长应力引起的微裂纹。
Experimental techniques have been developed for determining Ni63and O18tracer distributions in NiO scales ranging in thickness from ∼0.1 to 100 μ. These have been used to investigate Ni and O transport in scales on {100} Ni crystals and polycrystalline Ni in the temperature range 500–1300° C. NiO grown on {100} Ni crystals at 1000°C was uniform and compact and grew by the bulk diffusion of Ni in NiO by a vacancy mechanism. At temperatures below 800°C the principal transport mechanism was short-circuit diffusion of Ni in NiO. At all temperatures short-circuit diffusion of oxygen contributed to scale growth on polycrystalline Ni and was responsible for growth of the inner layer of duplex scales. The oxygen diffusion paths are believed to be micro-cracks induced by growth stresses.