Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS
Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS
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DOI：
10.1109/tns.2010.2076836
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发表时间：
2010-10
影响因子：
1.8
通讯作者：
S. Jagannathan;M. Gadlage;B. Bhuva;peixiong zhao;B. Narasimham;J. Chetia;J. Ahlbin;L. Massengill
中科院分区：
文献类型：
--
作者：
S. Jagannathan;M. Gadlage;B. Bhuva;peixiong zhao;B. Narasimham;J. Chetia;J. Ahlbin;L. Massengill
描述了一种用于分离由N型撞击和P型撞击导致的单粒子瞬态的新型电路设计。利用重离子在65纳米工艺下获得的测量结果表明，P型撞击和N型撞击的电荷收集机制不同。所收集的数据代表了65纳米体CMOS技术中首次对单粒子瞬态脉冲宽度进行的此类分离。对于低线性能量转移（LET）粒子，N型撞击瞬态更长，但对于高LET粒子，P型撞击瞬态更长。结果表明，N阱深度和寄生双极效应是影响瞬态脉冲宽度的最重要参数。
A novel circuit design for separating single-event transients due to N-hits and P-hits is described. Measurement results obtained from a 65 nm technology using heavy-ions show different dominant mechanisms for charge collection for P-hits and N-hits. The data collected represent the first such separation of SET pulse widths for 65 nm bulk CMOS technology. For low LET particles, N-hit transients are longer, but for high LET particles, P-hit transients are longer. N-well depth and the parasitic bipolar effect are shown to be the most important parameters affecting transient pulse widths.