Stress-Induced Nucleation of Microcrystalline Silicon from Amorphous Phase
Stress-Induced Nucleation of Microcrystalline Silicon from Amorphous Phase
复制标题
非晶相微晶硅的应力诱导成核
DOI：
10.1143/jjap.41.2821
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发表时间：
2002
影响因子：
1.5
通讯作者：
A. Matsuda
中科院分区：
文献类型：
--
作者：
H. Fujiwara;M. Kondo;A. Matsuda
我们已经证明，氢化非晶硅（a-Si：H）相中的高内应力对于低温（<450°C）下微晶硅（µc-Si：H）从非晶相中成核至关重要。在高氢稀释的等离子体增强化学气相沉积中，无论沉积温度如何，只有当a-Si：H内部的压应力超过10750 MPa时，才观察到µc-Si：H成核。作为交替a-Si：H沉积和H2-等离子体处理的结果，我们证实了a-Si：H中的高压应力来源于插入a-Si：H网络中的H。发现a-Si：H中的高压应力促进了SiHn（n=1-2）络合物的形成，该络合物被认为是µc-Si：H成核的前体。基于上述结果，我们对应力诱导的µc-Si：H非晶相成核进行了广泛的概述。
We have demonstrated that a high intrinsic stress in the hydrogenated amorphous silicon (a-Si:H) phase is essential for microcrystalline silicon (µc-Si:H) nucleation from the amorphous phase at low temperatures (<450°C). In plasma-enhanced chemical vapor deposition at high hydrogen dilution, µc-Si:H nucleation was observed only when compressive stress inside a-Si:H exceeds ∼750 MPa, regardless of deposition temperature. As the result of alternating a-Si:H deposition and H2-plasma treatment, we confirmed that the high compressive stress in a-Si:H originates from H inserted into the a-Si:H network. The high compressive stress in a-Si:H was found to enhance the formation of a SiHn (n=1-2) complex that has been proposed to be a precursor for µc-Si:H nucleation. Based on the above results, we present a broad overview of stress-induced µc-Si:H nucleation from the amorphous phase.